SiC is extensively used in microelectronic devices owing to its several unique properties. However, low yield and high cost of the SiC manufacturing process are the major challenges that must be ...

Silicon carbide (SiC) unipolar semiconductors are in wide commercial use, but their operations are limited by a trade-off relationship between breakdown voltage and specific resistance of the drift ...

The small and complicated features of TSVs give rise to different defect types. Defects can form during any of the TSV ...

Despite silicon carbide’s (SiC) promise over conventional silicon for the design of next-generation power electronics devices, broad adoption of this high-performance compound semiconductor has been ...

What if manufacturing companies could pinpoint the exact cause of a defect the moment it occurs, preventing costly production delays and ensuring top-notch quality? Generative artificial intelligence ...

Introducing a vertical arrangement of n and p layers into the drift layer of semiconductors to enable bipolar operation is a way around the 'unipolar limit' problem in semiconductors. But defect ...