A research team led by Kyushu University has developed a new fabrication method for energy-efficient magnetic random-access memory (MRAM) using a new material called thulium iron garnet (TmIG) that ...
Memory technology has evolved quickly in recent years, driven by the need to improve on traditional systems. One promising candidate, Magnetoresistive Random Access Memory (MRAM), is gaining attention ...
A diagram of the material developed using on-axis magnetron sputtering. By applying a current through the platinum material on top of the TmIG, researchers were able to reverse the magnetization ...
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