ALPHARETTA, Ga., Dec. 16, 2025 /PRNewswire/ -- Flip Electronics and Ampleon continue to extend the supply of Ampleon's Legacy LDMOS portfolio of high-performance RF transistors to customers worldwide.
A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...
Diamond field-effect transistors (FETs) represent a cutting-edge development in semiconductor technology, leveraging the exceptional thermal conductivity, high breakdown voltage, and chemical ...
the scaling of silicon-based metal-oxide-semiconductor field-effect transistors (Si MOSFETs) and evolution of novel structure transistors in accordance with Moore’s Law, especially for modern ...
A field effect transistor (FET) is a carrier device with three terminals: source, drain, and gate. In FETs, an electric field can be applied at the terminal of the gate, modifying the conductive ...
A technical paper titled “Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications” was published by researchers at George Mason University and National Institute of ...
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