Gallium nitride (GaN) RF transistors have traditionally been depletion mode, making them difficult to bias. High frequency enhancement mode transistors, such as the EPC8000 series eGaN FETs from EPC, ...
GREENSBORO, N.C.--(BUSINESS WIRE)--Guerrilla RF, Inc. (OTCQX: GUER) today announced that its high-efficiency GRF5509 4-watt power amplifier was selected by Impinj (NASDAQ: PI) for use in their ...
The Class E power amplifier can be turned into an efficient, tuned-input, tuned-output (TITO) oscillator with the addition of a tuned circuit at its gate. The oscillator/amplifier has a power-added ...
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