Imec claims a new benchmark for mobile RF transistor performance. The approach, based on a gallium nitride (GaN) metal-oxide semiconductor high-electron-mobility transistor (MOSHEMT) on silicon (Si), ...
A team advances transistor performance through perovskite-cation incorporation. In the movie Avengers, superheroes such as Iron Man, Captain America, Hulk, and Thor each contribute their unique ...
After dominating the electronics industry for decades, conventional silicon-based transistors are gradually approaching their ...
Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility ...
Downscaling of electronic devices, such as transistors, has reached a plateau, posing challenges for semiconductor fabrication. However, a research team led by materials scientists recently discovered ...
The transition to the 2nm technology node introduces unprecedented challenges in Automated Test Equipment (ATE) bring-up and manufacturability. As semiconductor devices scale down, the complexity of ...
As transistor sizes shrink, short channel effects make it more difficult for transistor gates to turn a transistor ON and OFF [1]. One method to overcome this problem is to move away from planar ...
Robot vacuums, a major household appliance that make life easier, are convenient but they often stumble on door thresholds that are not even very high. A similar threshold voltage exists in a ...
The printing press has contributed immensely to the advancement of mankind by elevating politics, economy, and culture to higher grounds. Today, it goes beyond simply printing books or documents, and ...
(Nanowerk Spotlight) Organic semiconductors have long held promise for enabling deformable electronic devices that can be manufactured at low cost and high volumes using printing techniques. However, ...
Junctionless transistors and nanowire devices represent a paradigm shift in semiconductor technology. By eliminating traditional p–n junctions, these devices offer a simplified fabrication process ...