Abstract: Gate oxide Dielectric Breakdown (BD) in Metal-Oxide-Semiconductor (MOS) structures is a random process, which can be exploited in cryptography applications. Here, the post-BD current in ...
Abstract: The Solid Isotropic Material with Penalization (SIMP) method is highly regarded in the field of topology optimization due to its ease of implementation and conceptual clarity. However, in ...
cSt George's School of Health and Medical Sciences, City St George's University of London, London, UK dPublic Health Research Institute, St George's School of Health and Medical Sciences, City St ...
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